IRFBG30
Original price was: ₨180.00.₨150.00Current price is: ₨150.00.
The IRFBG30 is a 1000V N-Channel Power MOSFET designed for high-voltage switching applications. It features fast switching performance, repetitive avalanche capability, and a rugged TO-220AB package, making it ideal for SMPS, solar inverters, UPS systems, industrial power supplies, and PFC circuits.
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Description
IRFBG30 N-Channel Power MOSFET
The IRFBG30 is a high-voltage N-Channel Power MOSFET engineered for efficient power switching in demanding applications. It offers a 1000V drain-source voltage, 3.1A continuous drain current, and low gate drive requirements, making it suitable for high-frequency and high-voltage power conversion systems. Its rugged construction, repetitive avalanche rating, and fast switching characteristics ensure reliable performance in industrial environments.
Key Features
- N-Channel Power MOSFET
- Drain-Source Voltage (VDS): 1000V
- Continuous Drain Current (ID): 3.1A
- Low On-Resistance: 5.0Ω (max @ VGS = 10V)
- Fast Switching Performance
- Repetitive Avalanche Rated
- Dynamic dV/dt Rated
- Low Gate Drive Requirement
- TO-220AB Through-Hole Package
- RoHS Compliant
Applications
- Switch Mode Power Supplies (SMPS)
- Solar Inverters
- UPS Systems
- Power Factor Correction (PFC)
- Industrial Power Supplies
- High-Voltage DC-DC Converters
- Motor Control
- General High-Voltage Switching
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